2SJ338 Datasheet - Toshiba Semiconductor

2SJ338 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application l High breakdown voltage l High forward transfer admittance l Complementary to 2SK2162 : VDSS = 180 V : |Yfs| = 0.7 S (typ.) 2SJ338 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Gate source voltage Drain current (Note 1) Power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS .

2SJ338_ToshibaSemiconductor.pdf