Datasheet Specifications
- Part number
- 2SJ332
- Manufacturer
- Renesas ↗ Technology
- File Size
- 77.36 KB
- Datasheet
- 2SJ332_RenesasTechnology.pdf
- Description
- Silicon P-Channel MOS FET
Description
www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching .
Features
* Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 2 3 3 www. DataSheetApplications
* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr2SJ332 Distributors
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