2SJ332 Datasheet - Renesas Technology

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2SJ332 Silicon P-Channel MOS FET

www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching .

2SJ332_RenesasTechnology.pdf

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Datasheet Details

Part number:

2SJ332

Manufacturer:

Renesas ↗ Technology

File Size:

77.36 KB

Description:

Silicon P-Channel MOS FET

Features

* Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 2 3 3 www. DataSheet

Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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2SJ332 Silicon P-Channel MOS FET Renesas Technology

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