Datasheet Details
- Part number
- 2SJ334
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 421.83 KB
- Datasheet
- 2SJ334_ToshibaSemiconductor.pdf
- Description
- P-Channel MOSFET
2SJ334 Description
2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 *π *MOSV) 2SJ334 DC *DC Converter, Relay Drive and Motor D.
2SJ334 Features
* gy are strictly prohibited except in compliance with all applicable export laws and regulations.
* Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and
2SJ334 Applications
* Unit: mm
z 4-V gate drive
z Low drain
* source ON-resistance : RDS (ON) = 29 mΩ (typ. ) z High forward transfer admittance : |Yfs| = 23 S (typ. ) z Low leakage current : IDSS =
* 100 μA (max) (VDS =
* 60 V) z Enhancement mode : Vth =
* 0.8 to
* 2.0 V (VDS =
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