2SJ334 Datasheet - Toshiba Semiconductor

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2SJ334 P-Channel MOSFET

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 *π *MOSV) 2SJ334 DC *DC Converter, Relay Drive and Motor D.

2SJ334_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SJ334

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

421.83 KB

Description:

P-Channel MOSFET

Features

* gy are strictly prohibited except in compliance with all applicable export laws and regulations.
* Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and

Applications

* Unit: mm z 4-V gate drive z Low drain
* source ON-resistance : RDS (ON) = 29 mΩ (typ. ) z High forward transfer admittance : |Yfs| = 23 S (typ. ) z Low leakage current : IDSS =
* 100 μA (max) (VDS =
* 60 V) z Enhancement mode : Vth =
* 0.8 to
* 2.0 V (VDS =

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2SJ334 P-Channel MOSFET Toshiba Semiconductor

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