2SJ334 Datasheet (Toshiba Semiconductor)

2SJ334, P-Channel MOSFET

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSV) 2SJ334 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain source ON-resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance : |Yfs| = 23 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Abso

2SJ334 Features

* gy are strictly prohibited except in compliance with all applicable export laws and regulations.

* Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and