2SJ304 Datasheet - Toshiba Semiconductor

2SJ304 P-Channel MOSFET

2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSIV) 2SJ304 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Ab.

2SJ304_ToshibaSemiconductor.pdf