2SJ305 Datasheet - Toshiba Semiconductor

2SJ305 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications High input impedance Low gate threshold voltage.: Vth = 0.5 to 1.5 V Excellent switching times.: ton = 0.06 μs (typ.) toff = 0.15 μs (typ.) Low drain-source ON resistance: RDS (ON) = 2.4 Ω (typ.) Small package. Complementary to 2SK2009 2SJ305 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteri.

2SJ305_ToshibaSemiconductor.pdf