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2SJ312 Datasheet - Toshiba Semiconductor

2SJ312 - P-Channel MOSFET

2SJ312 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 π MOSIV) 2SJ312 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain source ON resistance : RDS (ON) = 80 mΩ (typ.) l High forward transfer admittance : |Yfs| = 8.0 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement mode : Vth = 0.8~ 2.0 V (VDS = 10 V, ID = 1 mA.

2SJ312_ToshibaSemiconductor.pdf