Datasheet Details
- Part number
- 2SJ312
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 217.65 KB
- Datasheet
- 2SJ312_ToshibaSemiconductor.pdf
- Description
- P-Channel MOSFET
2SJ312 Description
2SJ312 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 *π *MOSIV) 2SJ312 DC *DC Converter, Relay Drive and Motor .
2SJ312 Applications
* Unit: mm
l 4 V gate drive l Low drain
* source ON resistance : RDS (ON) = 80 mΩ (typ. ) l High forward transfer admittance : |Yfs| = 8.0 S (typ. ) l Low leakage current : IDSS =
* 100 µA (max) (VDS =
* 60 V) l Enhancement
* mode : Vth =
* 0.8~
* 2.0 V (VDS =
📁 Related Datasheet
📌 All Tags