2SJ312 P-Channel MOSFET

Toshiba Semiconductor

Description

2SJ312 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 *π *MOSIV) 2SJ312 DC *DC Converter, Relay Drive and Motor .

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Datasheet Specifications

Part number: 2SJ312
Manufacturer: Toshiba ↗ Semiconductor
File Size: 217.65 KB
Datasheet: 2SJ312_ToshibaSemiconductor.pdf
Description: P-Channel MOSFET

Applications

* Unit: mm l 4 V gate drive l Low drain
* source ON resistance : RDS (ON) = 80 mΩ (typ. ) l High forward transfer admittance : |Yfs| = 8.0 S (typ. ) l Low leakage current : IDSS =
* 100 µA (max) (VDS =
* 60 V) l Enhancement
* mode : Vth =
* 0.8~
* 2.0 V (VDS =

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2SJ312 P-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SJ312-like datasheet