Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter
Outline
DPAK-1 4 4 1 1 D G 1
2SJ319, Hitachi Semiconductor
2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low .
2SJ319S, Hitachi Semiconductor
2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low .
2SJ312, Toshiba Semiconductor
2SJ312
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ312
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit.
2SJ313, Toshiba Semiconductor
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ313
Audio Frequency Power Amplifier Application
z High breakdown voltage: VDSS = −180 V .
2SJ315, Toshiba Semiconductor
2SJ315
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ315
DC−DC Converter
Unit: mm
FEATURES
z 4− Volt gate drive z Low .
2SJ317, Hitachi Semiconductor
2SJ317
Silicon P-Channel MOS FET
Application
High speed power switching Low voltage operation
Features
• Very low on-resistance • High speed switchi.
