Part number:
2SJ316
Manufacturer:
Sanyo Semicon Device
File Size:
89.99 KB
Description:
P-channel mosfet.
* Low ON resistance.
* Ultrahigh-speed switching.
* Low-voltage drive. P-Channel Silicon MOSFET 2SJ316 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ316] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings
2SJ316
Sanyo Semicon Device
89.99 KB
P-channel mosfet.
📁 Related Datasheet
2SJ312 - P-Channel MOSFET
(Toshiba Semiconductor)
2SJ312
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ312
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit.
2SJ313 - P-Channel MOSFET
(Toshiba Semiconductor)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ313
Audio Frequency Power Amplifier Application
z High breakdown voltage: VDSS = −180 V .
2SJ315 - P-Channel MOSFET
(Toshiba Semiconductor)
2SJ315
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ315
DC−DC Converter
Unit: mm
FEATURES
z 4− Volt gate drive z Low .
2SJ317 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ317
Silicon P-Channel MOS FET
Application
High speed power switching Low voltage operation
Features
• Very low on-resistance • High speed switchi.
2SJ319 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low .
2SJ319L - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low .
2SJ319S - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ319(L), 2SJ319(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low .
2SJ302 - P-Channel MOSFET
(NEC)
.