2SJ315 Datasheet, Mosfet, Toshiba Semiconductor

2SJ315 Features

• Mosfet z 4
• Volt gate drive z Low drain
• source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.) z Low leakage current : IDSS =

PDF File Details

Part number:

2SJ315

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

219.28kb

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📄 Datasheet

Description:

P-channel mosfet.

2SJ315 Application

• Applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which ma

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2SJ315

Toshiba Semiconductor

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