| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Rochester Electronics LLC | 2SJ350 | P-CHANNEL POWER MOSFET | DigiKey | 652 | 198 units |
$1.52
|
🛒 Buy Now |
2SJ350
Hitachi Semiconductor
47.16 KB
P-channel mosfet.
2SJ350
Silicon P-Channel MOS FET
ADE-208-138 1st. Edition
Application
High speed power switching
.
Features
* * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device ca.
📁 Related Datasheet
2SJ351 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ351, 2SJ352
Silicon P-Channel MOS FET
ADE-208-143 1st. Edition
Application
Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221.
2SJ352 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ351, 2SJ352
Silicon P-Channel MOS FET
ADE-208-143 1st. Edition
Application
Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221.
2SJ353 - P-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SJ353 is a P-channel MOS FET of a vertical type and i.
2SJ355 - P-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ355
P-CHANNEL MOS FET FOR HIGH SWITCHING
The 2SJ355 is a P-channel MOS FET of a vertical type and is a sw.
2SJ355 - P-Channel MOSFET
(VBsemi)
2SJ355
P-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.050 at VGS = - 10 V
0.056 at VGS = - 4.5 V
ID (A.
2SJ355 - P-Channel MOSFET
(JINGAO)
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has bee.
 |
|
Renesas Electronics Corporation
|
| 2SJ350 |
|
FET Transistor, Silicon P-Channel MOS FET
|
| Verical |
| 652 In Stock |
| Qty : 206 units |
|
Unit Price : $1.83
|
| 🛒 Buy Now |
 |
|
Renesas Electronics Corporation
|
| 2SJ350 |
|
Power Field-Effect Transistor, 6A, 120V P-Channel MOSFET
|
| Rochester Electronics |
| 652 In Stock |
| Qty : 10000 units |
|
Unit Price : $1.17
|
| 🛒 Buy Now |
