Datasheet Details
- Part number
- 2SJ355
- Manufacturer
- NEC
- File Size
- 67.68 KB
- Datasheet
- 2SJ355_NEC.pdf
- Description
- P-Channel MOSFET
2SJ355 Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING The 2SJ355 is a P-channel MOS FET of a vertical type and is a sw.
2SJ355 Features
* Can be directly driven by 5-V IC
* Low ON resistance RDS(on) = 0.60 Ω MAX. @VGS =
* 4 V, ID =
* 1.0 A RDS(on) = 0.35 Ω MAX. @VGS =
* 10 V, ID =
* 1.0 A
0.8 MIN. S 0.42 ±0.06 1.5
D
G
0.47 ±0.06 3.0
0.42 ±0.06
4.0 ±0.25
0.41 +0.03
* 0.05
EQU
2SJ355 Applications
* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic
📁 Related Datasheet
📌 All Tags