2SJ350 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ350
Silicon P-Channel MOS FET
ADE-208-138 1st. Edition
Application
High speed power switching
Features
• • • • • Low on-resistance High speed sw.
2SJ351 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ351, 2SJ352
Silicon P-Channel MOS FET
ADE-208-143 1st. Edition
Application
Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221.
2SJ352 - P-Channel MOSFET
(Hitachi Semiconductor)
2SJ351, 2SJ352
Silicon P-Channel MOS FET
ADE-208-143 1st. Edition
Application
Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221.
2SJ353 - P-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SJ353 is a P-channel MOS FET of a vertical type and i.
2SJ355 - P-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ355
P-CHANNEL MOS FET FOR HIGH SWITCHING
The 2SJ355 is a P-channel MOS FET of a vertical type and is a sw.
2SJ355 - P-Channel MOSFET
(VBsemi)
2SJ355
P-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.050 at VGS = - 10 V
0.056 at VGS = - 4.5 V
ID (A.
2SJ355 - P-Channel MOSFET
(JINGAO)
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has bee.
2SJ356 - P-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ356
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SJ356 is a P-channel MOS FET of a vertical type and i.