2SJ356 - P-Channel MOSFET
2SJ356 Features
* Can be directly driven by 5-V IC
* Low ON resistance RDS(on) = 0.95 Ω MAX. @VGS =
* 4 V, ID =
* 1.0 A RDS(on) = 0.50 Ω MAX. @VGS =
* 10 V, ID =
* 1.0 A 0.8 MIN. S 0.42 ±0.06 1.5 D G 0.47 ±0.06 3.0 0.42 ±0.06 4.0 ±0.25 0.41 +0.03
* 0.05 EQU
