2SJ356 Datasheet - NEC

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2SJ356 P-Channel MOSFET

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and i.

2SJ356_NEC.pdf

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Datasheet Details

Part number:

2SJ356

Manufacturer:

NEC

File Size:

68.84 KB

Description:

P-Channel MOSFET

Features

* Can be directly driven by 5-V IC
* Low ON resistance RDS(on) = 0.95 Ω MAX. @VGS =
* 4 V, ID =
* 1.0 A RDS(on) = 0.50 Ω MAX. @VGS =
* 10 V, ID =
* 1.0 A 0.8 MIN. S 0.42 ±0.06 1.5 D G 0.47 ±0.06 3.0 0.42 ±0.06 4.0 ±0.25 0.41 +0.03
* 0.05 EQU

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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2SJ356 P-Channel MOSFET NEC

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