Part number:
2SJ356
Manufacturer:
NEC
File Size:
68.84 KB
Description:
P-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and i.
* Can be directly driven by 5-V IC
* Low ON resistance RDS(on) = 0.95 Ω MAX. @VGS =
* 4 V, ID =
* 1.0 A RDS(on) = 0.50 Ω MAX. @VGS =
* 10 V, ID =
* 1.0 A 0.8 MIN. S 0.42 ±0.06 1.5 D G 0.47 ±0.06 3.0 0.42 ±0.06 4.0 ±0.25 0.41 +0.03
* 0.05 EQU
2SJ356
NEC
68.84 KB
P-channel mosfet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and i.
📁 Related Datasheet
2SJ350 P-Channel MOSFET (Hitachi Semiconductor)
2SJ351 P-Channel MOSFET (Hitachi Semiconductor)
2SJ352 P-Channel MOSFET (Hitachi Semiconductor)
2SJ353 P-Channel MOSFET (NEC)
2SJ355 P-Channel MOSFET (NEC)
2SJ355 P-Channel MOSFET (VBsemi)
2SJ355 P-Channel MOSFET (JINGAO)
2SJ357 P-Channel MOSFET (NEC)
2SJ358 P-Channel MOSFET (NEC)
2SJ358C P-CHANNEL MOSFET FOR SWITCHING (Renesas)
