2SJ353 P-Channel MOSFET

NEC

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and i.

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Datasheet Specifications

Part number: 2SJ353
Manufacturer: NEC
File Size: 58.40 KB
Datasheet: 2SJ353_NEC.pdf
Description: P-Channel MOSFET

Features

* Radial taping supported
* Can be directly driven by output of 5-V IC
* Low ON resistance RDS(on) = 0.68 Ω MAX. @VGS =
* 4 V, ID =
* 0.8 A RDS(on) = 0.37 Ω MAX. @VGS =
* 10 V, ID =
* 1.0 A 0.6 ±0.1 0.6 ±0.1 1.7 1.7 GD S EQUIVALENT CIRCUIT Drain

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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2SJ353 P-Channel MOSFET NEC

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