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2SJ381 - P-Channel MOSFET

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. P-Channel Silicon MOSFET 2SJ381 Ultrahigh-Speed Switching.

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Full PDF Text Transcription

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Ordering number:EN5296A Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. P-Channel Silicon MOSFET 2SJ381 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ381] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (250mm2× 0.
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