Datasheet4U Logo Datasheet4U.com

2SJ389S - P-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤135mΩ(@VGS= -10V; ID= -5A).
  • High speed switching.
  • Low drive current.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SJ380 P-Channel MOSFET Toshiba Semiconductor
2SJ380 P-Channel MOSFET Transistor Inchange Semiconductor
2SJ381 P-Channel MOSFET Sanyo Semicon Device
2SJ382 P-Channel MOSFET Sanyo Semicon Device
2SJ383 P-Channel MOSFET Sanyo Semicon Device

Other Datasheets by Inchange Semiconductor

Part Number Description
2SJ477-01MR P-Channel MOSFET
2SJ526 P-Channel MOSFET
2SJ529S P-Channel MOSFET
2SJ598 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc P-Channel MOSFET Transistor 2SJ389S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤135mΩ(@VGS= -10V; ID= -5A) ·High speed switching ·Low drive current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -10 PD Total Dissipation @TC=25℃ 30 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Channel-to-case thermal resistance Rth(j-c) MAX 4.