Datasheet Details
| Part number | 2SJ380 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.58 KB |
| Description | P-Channel MOSFET Transistor |
| Datasheet | 2SJ380-InchangeSemiconductor.pdf |
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Overview: isc P-Channel MOSFET Transistor.
| Part number | 2SJ380 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.58 KB |
| Description | P-Channel MOSFET Transistor |
| Datasheet | 2SJ380-InchangeSemiconductor.pdf |
|
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·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ -12 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.57 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W 2SJ380 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc P-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SJ380 | P-Channel MOSFET | Toshiba Semiconductor |
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