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2SJ387(L), 2SJ387(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0862-0200 (Previous: ADE-208-1196)
Rev.2.00 Sep 07, 2005
Features
• Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 D
123
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7
2SJ387(L), 2SJ387(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
2SJ387 Datasheet
