2SJ387
2SJ387 is Silicon P-Channel MOSFET manufactured by Renesas.
Description
High speed power switching
REJ03G0862-0200 (Previous: ADE-208-1196)
Rev.2.00 Sep 07, 2005
Features
- Low on-resistance
- Low drive current
- 2.5 V Gate drive device can be driven from 3 V Source
- Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 D
1. Gate 2. Drain 3. Source 4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7
2SJ387(L), 2SJ387(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol VDSS VGSS ID
ID (pulse) Note 1 IDR
Pch Note 2 Tch Tstg
Value
- 20 ±10
- 10
- 40
- 10 20 150
- 55 to +150
(Ta = 25°C) Unit
V V A A A W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time
Note: 3. Pulse test
Symbol V (BR) DSS V (BR) GSS
IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr
Min
- 20...