2SJ387 Datasheet
2SJ387 Datasheet (VBsemi)
VBsemi
2SJ387-VB 2SJ387-VB Datasheet P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.016 at VGS = - 4.5 V 0.025 at VGS = - 2.5 V ID (A)d - 40 - 35 Qg (Typ.) 13.
* Halogen-free According to IEC 61249-2-21
Definition
* Trench Power MOSFET
* 100 % Rg Tested
APPLICATIONS
* Load Switch
* Battery Switch
GD S
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC.
2SJ387 Datasheet (Hitachi Semiconductor)
Hitachi Semiconductor
2SJ387(L), 2SJ387(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suita.
*
*
*
* Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2
2
3
3
2SJ387(L), 2SJ387(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to.
2SJ387 Datasheet (Renesas)
Renesas
High speed power switching REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • S.
* Low on-resistance
* Low drive current
* 2.5 V Gate drive device can be driven from 3 V Source
* Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 D
123
123
.