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2SJ526 P-Channel MOSFET

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Description

isc P-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
2SJ526
Manufacturer
INCHANGE
File Size
250.03 KB
Datasheet
2SJ526-INCHANGE.pdf
Description
P-Channel MOSFET

Features

* Drain-source on-resistance: RDS(on) ≤ 110mΩ@10V
* Fast Switching Speed
* Low drive current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* High fast switching Power Supply
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -12 A IDM Drain Current-Single Pulsed -48 A PD Total Dissipation @TC=25℃ 25 W Tj

2SJ526 Distributors

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P-Channel MOSFET INCHANGE
INCHANGE 2SJ526-like datasheet