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Guangdong Kexin Industrial
Guangdong Kexin Industrial

2SK3635 Datasheet Preview

2SK3635 Datasheet

MOS Field Effect Transistor

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2SK3635 pdf
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MOS Field Effect Transistor
2SK3635
MOSFICET
Features
High voltage: VDSS = 200 V
Gate voltage rating: 30 V
Low on-state resistance
RDS(on) = 0.43 MAX. (VGS = 10 V, ID = 4.0 A)
Low Ciss: Ciss = 390 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
Rating
200
30
8.0
24
24
1.0
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=200V,VGS=0
10 A
VGS= 30V,VDS=0
10 A
VDS=10V,ID=1mA
2.5 3.5 4.5 V
VDS=10V,ID=4.0A
3. 5
S
VGS=10V,ID=4.0A
0.34 0.43
390 pF
VDS=10V,VGS=0,f=1MHZ
95 pF
45 pF
5 ns
ID=4.0A,VGS(on)=10V,RG=0 ,VDD=100V
7
19
ns
ns
6 ns
VDD = 160V
VGS = 10 V
ID =8.0A
12 nC
2 nC
6 nC
www.kexin.com.cn 1


Part Number 2SK3635
Description MOS Field Effect Transistor
Maker Guangdong Kexin Industrial
Total Page 1 Pages
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