2SK3639 - MOS Field Effect Transistor

Product Overview

Guangdong Kexin Industrial

Part number	2SK3639
Manufacturer	Guangdong Kexin Industrial
File Size	75.41 KB
Description	MOS Field Effect Transistor
Datasheet	2SK3639 Datasheet
Additional preview pages of the 2SK3639 datasheet.

Low on-state resistance RDS(on)1 = 5.5 m RDS(on)2 = 8.5 m MAX. (VGS = 10 V, ID = 32 A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Low Ciss: Ciss = 2400 pF TYP. +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 MAX. (VGS = 4.5 V, ID = 32 A) 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power diss.

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Published: Mar 3, 2009 |