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Guangdong Kexin Industrial

BAT854SW Datasheet Preview

BAT854SW Datasheet

Schottky barrier (double) diodes

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SMD Type
Schottky barrier (double) diodes
BAT854W;BAT854AW
BAT854CW;BAT854SW
Diodesw w w . D a t a S h e
Features
Very low forward voltage
Very low reverse current
Guard ring protected
Very small SMD package.
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Symbol
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
Rth j-a
Conditions
tp 1 s; d 0.5
t = 8.3 ms half sinewave;JEDEC method
Min
-65
-65
Max
40
200
300
1
+150
150
+150
625
Unit
V
mA
mA
A
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Continuous reverse current
Diode capacitance
Note
1. Pulse test: tp 300 s; รค
0.02.
IR
Cd
Conditions
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 25 V; Note 1
f = 1 MHz; VR = 1 V
Typ Max Unit
200
260
340 mV
420
550
0.5 A
20 pF
Marking
Type
Marking
BTA854W
81
BAT854AW
82
BAT854CW
83
BAT854SW
84
www.kexin.com.cn 1


Part Number BAT854SW
Description Schottky barrier (double) diodes
Maker Guangdong Kexin Industrial
Total Page 1 Pages
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