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SMD Type
HEXFET Power MOSFET KRF7601
Features
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching
IC IC
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 3.8A, di/dt 96A/ s, VDD V(BR)DSS,TJ 10sec. 150 VGS dv/dt TJ, TSTG R JA *1 Symbol ID ID IDM PD Rating 5.7 4.6 30 1.8 14 12 5 -55 to + 150 70 /W W W/ V V/ns A Unit
*2 Surface mounted on FR-4 board, t
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KRF7601 Datasheet
