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KRF7606 - HEXFET Power MOSFET

Features

  • Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current.
  • 1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp 10 S Peak Diode Recovery dv/dt.
  • 2 Junc.

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Datasheet preview – KRF7606

Datasheet Details

Part number KRF7606
Manufacturer Guangdong Kexin Industrial
File Size 82.18 KB
Description HEXFET Power MOSFET
Datasheet download datasheet KRF7606 Datasheet
Additional preview pages of the KRF7606 datasheet.

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Full PDF Text Transcription

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SMD Type HEXFET Power MOSFET KRF7606 IC IC Features Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp 10 S Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS VGSM dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM Rating -30 -3.6 -2.9 -29 1.8 1.1 14 20 30 -5.
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