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Guangdong Kexin Industrial
Guangdong Kexin Industrial

KRF7607 Datasheet Preview

KRF7607 Datasheet

HEXFET Power MOSFET

No Preview Available !

KRF7607 pdf
SMD Type
HEXFET Power MOSFET
KRF7607
Features
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 4.5V,Ta = 25
Continuous Drain Current, VGS @ 4.5V,TA = 70
Pulsed Drain Current*1
Power Dissipation Ta = 25
Power Dissipation Ta = 70
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Junction-to-Ambient *
* Surface mounted on FR-4 board, t 10sec.
Symbol
ID
ID
IDM
PD
VGS
TJ, TSTG
R JA
Rating
20
6.5
5.2
1.8
1.2
0.014
12
-55 to + 150
70
Unit
A
W
W/
V
/W
www.kexin.com.cn 1



Guangdong Kexin Industrial
Guangdong Kexin Industrial

KRF7607 Datasheet Preview

KRF7607 Datasheet

HEXFET Power MOSFET

No Preview Available !

KRF7607 pdf
SMD Type
ICIC
KRF7607
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS
VGS = 0V, ID = 250 A
V(BR)DSS/ TJ ID = 1mA,Reference to 25
RDS(on)
VGS = 4.5V, ID = 6.5A*1
VGS = 2.5V, ID =5.2A*1
VGS(th)
VDS = VGS, ID = 250 A
gfs VDS = 10V, ID = 6.5A*1
IDSS
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70
IGSS
VGS = -12V
VGS = 12V
Qg ID = 6.5A
Qgs VDS = 10V
Qgd VGS = 5.0V,*1
td(on)
VDD = 10V
tr ID = 1.0A
td(off)
RG =6.0
tf RD = 10
Ciss VGS = 0V
Coss
VDS = 15V
Crss ƒ= 1.0MHz
IS
Pulsed Source Current Body Diode) *2
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited bymax
ISM
VSD
trr
Qrr
TJ = 25 , IS = 1.7A, VGS = 0V*1
TJ = 25 , IF = 1.7A.VR=10V
di/dt = 100A/ s*1
Min Typ Max Unit
20 V
0.016
V/
0.030
0.045
0.60 V
13 S
1.0
A
25
-100
100
nA
15 22
2.2 3.3 nC
3.5 5.3
8.5
11
ns
36
16
1310
150 pF
36
1.8
A
50
1.2 V
19 29 ns
13 20 nC
2 www.kexin.com.cn


Part Number KRF7607
Description HEXFET Power MOSFET
Maker Guangdong Kexin Industrial
Total Page 2 Pages
PDF Download
KRF7607 pdf
KRF7607 Datasheet PDF
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