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KRF7663 - HEXFET Power MOSFET

Features

  • Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ Ta = 25 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 Pulsed Drain Current.
  • 1 Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy.
  • 2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-.

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Datasheet Details

Part number KRF7663
Manufacturer Guangdong Kexin Industrial
File Size 81.95 KB
Description HEXFET Power MOSFET
Datasheet download datasheet KRF7663 Datasheet
Additional preview pages of the KRF7663 datasheet.

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Full PDF Text Transcription

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SMD Type HEXFET Power MOSFET KRF7663 Features Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel IC IC Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ Ta = 25 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy *2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 EAS VGS TJ, TSTG R JA Symbol VDS ID ID IDM Rating -20 -8.2 -6.6 -66 1.8 1.15 10 115 12 -55 to + 150 70 Unit V A @Ta= 25 @Ta= 70 PD W mW/ mJ V /W *1 Repetitive rating; pulse width limited by max. junction temperature.
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