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KRF7703 - HEXFET Power MOSFET

Features

  • Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) Unit: mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current.
  • 1 Power Dissipation.
  • 2 Power Dissipation.
  • 2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-.

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Datasheet Details

Part number KRF7703
Manufacturer Guangdong Kexin Industrial
File Size 65.67 KB
Description HEXFET Power MOSFET
Datasheet download datasheet KRF7703 Datasheet
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SMD Type HEXFET Power MOSFET KRF7703 IC IC TSSOP-8 Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) Unit: mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @Ta= 25 @Ta = 70 PD PD Rating -40 -6.0 -4.7 -24 1.5 0.96 0.012 20 -55 to + 150 83 Unit V A W W W/ V /W *1 Repetitive rating; pulse width limited by max. junction temperature.
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