Datasheet4U Logo Datasheet4U.com

KRF7706 - HEXFET Power MOSFET

Features

  • Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) 1,5,8: Drain 2,3,6,7: Source 4: Gate Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current.
  • 1 Power Dissipation.
  • 2 Power Dissipation.
  • 2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient.

📥 Download Datasheet

Datasheet preview – KRF7706

Datasheet Details

Part number KRF7706
Manufacturer Guangdong Kexin Industrial
File Size 65.70 KB
Description HEXFET Power MOSFET
Datasheet download datasheet KRF7706 Datasheet
Additional preview pages of the KRF7706 datasheet.
Other Datasheets by Guangdong Kexin Industrial

Full PDF Text Transcription

Click to expand full text
SMD Type HEXFET Power MOSFET KRF7706 IC IC TSSOP-8 Unit: mm Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) 1,5,8: Drain 2,3,6,7: Source 4: Gate Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -10V @ Ta = 25 Continuous Drain Current, VGS @ -10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @Ta= 25 @Ta = 70 PD PD Rating -30 -7 -5.7 -28 1.51 0.96 0.01 20 -55 to + 150 83 Unit V A W W W/ V /W *1 Repetitive rating; pulse width limited by max. junction temperature.
Published: |