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KRF7756 - HEXFET Power MOSFET

Features

  • Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) TSSOP-8 Unit: mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V @ TA = 25 Continuous Drain Current, VGS @ -4.5V @ TA = 70 Pulsed Drain Current.
  • 1 Power Dissipation.
  • 2 Power Dissipation.
  • 2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Ma.

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Datasheet Details

Part number KRF7756
Manufacturer Guangdong Kexin Industrial
File Size 68.92 KB
Description HEXFET Power MOSFET
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Full PDF Text Transcription

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SMD Type HEXFET Power MOSFET KRF7756 IC IC Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.2mm) TSSOP-8 Unit: mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V @ TA = 25 Continuous Drain Current, VGS @ -4.5V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS TJ, TSTG R JA Symbol VDS ID ID IDM @TA= 25 @TA = 70 PD PD Rating -12 -4.3 -3.5 -17 1.0 0.64 8 8 -55 to + 150 125 Unit V A W W m W/ V /W *1 Repetitive rating; pulse width limited by max. junction temperature.
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