Click to expand full text
SMD Type
HEXFET Power MOSFET KRF9952
IC IC
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2
5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Continuous Source Current (Diode Conduction) Power Dissipation Power Dissipation @Ta= 25 @Ta= 70 EAS IAR EAR dv/dt TJ, TSTG R
JA
Symbol VDS VGS ID ID IDM IS PD
N-Channel 30 20 3.5 2.8 16 1.7 2 1.3 44 2.0 0.25 5.0
P-Channel
Unit V V
-2.3 -1.8 -10 -1.3 A W 57 -1.3 mJ A mJ -5 -55 to + 150 62.
KRF9952 Datasheet
