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HM2301DR - P-Channel 20V (D-S) MOSFET

General Description

The +0'5 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipmen

Key Features

  • RDS(ON)= 0.48Ω @VGS=-4.5V.
  • RDS(ON)= 0.67Ω @VGS=-2.5V.
  • RDS(ON)= 0.95Ω @VGS=-1.8V.
  • RDS(ON)= 2.20Ω @VGS=-1.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.
  • Load Switch.
  • DSC Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -20 ±6 Unit V V.
  • Th Oct, 201.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM2301D P-Channel 20V (D-S) MOSFET
HM2301 P-Channel Enhancement Mode Power MOSFET
HM2301A P-Channel Enhancement Mode Power MOSFET
HM2301B P-Channel Trench Power MOSFET
HM2301BJR P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H3*8 P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The +0'5 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System FEATURES ● RDS(ON)= 0.48Ω @VGS=-4.5V ● RDS(ON)= 0.67Ω @VGS=-2.5V ● RDS(ON)= 0.95Ω @VGS=-1.8V ● RDS(ON)= 2.20Ω @VGS=-1.