Description
The +0'5 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Power Management in Note book
Portable Equipment
Battery Powered System
Features
- RDS(ON)= 0.48Ω @VGS=-4.5V.
- RDS(ON)= 0.67Ω @VGS=-2.5V.
- RDS(ON)= 0.95Ω @VGS=-1.8V.
- RDS(ON)= 2.20Ω @VGS=-1.5V.
- Super high density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current
capability.
- Capable doing Cu wire bonding.
- Load Switch.
- DSC
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
-20 ±6
Unit V V.
- Th Oct, 201.
HM2301DR-HMSemiconductor.pdf
