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HM2301B - P-Channel Trench Power MOSFET

Product Overview

H&M Semiconductor

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HM2301B P-Channel Trench Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2301B

Datasheet Details

Part number	HM2301B
Manufacturer	H&M Semiconductor
File Size	803.79 KB
Description	P-Channel Trench Power MOSFET
Datasheet	HM2301B Datasheet
Additional preview pages of the HM2301B datasheet.

Product details

Description

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment.

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Published: Jan 2, 2017 |