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HM2301F - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2301F by H&M Semiconductor is a P-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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HM2301F P-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Official preview page of the HM2301F P-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number	HM2301F
Manufacturer	H&M Semiconductor
File Size	521.88 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2301F-HMSemiconductor.pdf
Additional preview pages of the HM2301F datasheet.

HM2301F Product details

Description

The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

Features

VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Other Datasheets by H&M Semiconductor

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Published: Nov 27, 2018 |