HM2302E mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 15V,ID =2.0A RDS(ON) < 55mΩ @ VGS =4.5V RDS(ON) <85mΩ @ VGS =2.5V
* High Power and current handing capability
* Lead free product is acquired
* Su.
The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
Features
* VDS =.
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