HM2302BKR - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM2302BKR
Manufacturer	H&M Semiconductor
File Size	557.59 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302BKR Datasheet
Additional preview pages of the HM2302BKR datasheet.

The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipme

ES.
RDS(ON)= 270 mΩ @VGS=4.5V.
RDS(ON)= 330 mΩ @VGS=2.5V.
RDS(ON)= 450 mΩ @VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding DSC N-Channel 3D 2302 G1 2S Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V.

📁 Similar Datasheet

Other Datasheets by H&M Semiconductor

Published: Nov 27, 2018 |