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HM2302BKR - N-Channel Enhancement Mode Power MOSFET

General Description

The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management in Note book Portable Equipme

Key Features

  • ES.
  • RDS(ON)= 270 mΩ @VGS=4.5V.
  • RDS(ON)= 330 mΩ @VGS=2.5V.
  • RDS(ON)= 450 mΩ @VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding DSC N-Channel 3D 2302 G1 2S Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.3(18 N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● FEATURES ● RDS(ON)= 270 mΩ @VGS=4.5V ● RDS(ON)= 330 mΩ @VGS=2.5V ● RDS(ON)= 450 mΩ @VGS=1.