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HM3416E Datasheet - H&M Semiconductor

HM3416E N-Channel Enhancement Mode Power MOSFET

HM3416E Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions Marking D AEZE-

* SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Ma

HM3416E-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM3416E

Manufacturer:

H&M Semiconductor

File Size:

259.16 KB

Description:

N-channel enhancement mode power mosfet.

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HM3416E HM3416E N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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