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HM3413 - P-Channel Enhancement Mode Power MOSFET

Description

The HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram 3413 Marking and pin Assignment.

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Datasheet preview – HM3413

Datasheet Details

Part number HM3413
Manufacturer H&M Semiconductor
File Size 492.50 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3413 Datasheet
Additional preview pages of the HM3413 datasheet.

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Full PDF Text Transcription

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HM3413 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.
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