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HM3413B - P-Channel Enhancement Mode Power MOSFET

Description

The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram 3413 Marking and pin Assignment.

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Datasheet preview – HM3413B

Datasheet Details

Part number HM3413B
Manufacturer H&M Semiconductor
File Size 426.03 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3413B Datasheet
Additional preview pages of the HM3413B datasheet.

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Full PDF Text Transcription

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HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.
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