Datasheet Details
| Part number | HM3414B |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 380.69 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM3414B Datasheet
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General Description
The HM3414B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Key Features
- VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
- High Power and current handing capability.
- Lead free product is acquired.
- Surface Mount Package D G S Schematic diagram 3D 3414 G1 2S Marking and pin Assignment.