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HM3414 - N-Channel Enhancement Mode Power MOSFET

Description

The HM3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram 3D 3414 G1 2S Marking and pin Assignment.

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Datasheet Details

Part number HM3414
Manufacturer H&M Semiconductor
File Size 402.49 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3414 Datasheet
Additional preview pages of the HM3414 datasheet.

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Full PDF Text Transcription

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HM3414 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS = 20V,ID = 2.9A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.
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