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HM3415E - P-Channel Enhancement Mode Power MOSFET

General Description

The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Key Features

  • VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Full PDF Text Transcription for HM3415E (Reference)

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HM3415E P-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with g...

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ogy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.

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