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HM3415E - P-Channel Enhancement Mode Power MOSFET

Description

The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V ESD Rating: 2500V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – HM3415E

Datasheet Details

Part number HM3415E
Manufacturer H&M Semiconductor
File Size 482.37 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM3415E Datasheet
Additional preview pages of the HM3415E datasheet.

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Full PDF Text Transcription

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HM3415E P-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.
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