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HM3N80 Datasheet - H&M Semiconductor

Silicon N-Channel Power MOSFET

HM3N80 Features

* l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Pa

HM3N80 General Description

VDSS 800 HM3N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 conduction loss, improve switching performance and enhance RDS(ON)Typ 4.0 the avalanche energy. The transistor can be used in various power.

HM3N80 Datasheet (950.67 KB)

Preview of HM3N80 PDF

Datasheet Details

Part number:

HM3N80

Manufacturer:

H&M Semiconductor

File Size:

950.67 KB

Description:

Silicon n-channel power mosfet.

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HM3N80 Silicon N-Channel Power MOSFET H&M Semiconductor

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