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HM4260 Datasheet - H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

HM4260 Features

* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Spec

HM4260 Datasheet (620.37 KB)

Preview of HM4260 PDF

Datasheet Details

Part number:

HM4260

Manufacturer:

H&M Semiconductor

File Size:

620.37 KB

Description:

N-channel enhancement mode power mosfet.

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HM4260 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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