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HM4264B Datasheet - H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

HM4264B Features

* VDS = 50V,ID =1A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ)

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Low gate to drain charge to reduce switching losses Schematic diagram Application

HM4264B Datasheet (581.22 KB)

Preview of HM4264B PDF

Datasheet Details

Part number:

HM4264B

Manufacturer:

H&M Semiconductor

File Size:

581.22 KB

Description:

N-channel enhancement mode power mosfet.

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HM4264B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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