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HM4264B - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM4264B
Manufacturer	H&M Semiconductor
File Size	581.22 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4264B-HMSemiconductor.pdf

HM4264B Product details

Description

The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 50V,ID =1A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Nov 27, 2018 |