HM4482 mosfet equivalent, n-channel enhancement mode power mosfet.
z VDSS=100V／VGSS=±20V／ID=2.5A
RDS(ON)=105mΩ(Max.)@VGS=10V RDS(ON)=115mΩ(Max.)@VGS=4.5V z ESD protect z Reliable and Rugged z High Density Cell Design For Ultra Low On-Res.
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