HM4485 - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =-40V,ID =-13A RDS(ON).

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HM4485 p-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM4485
Manufacturer	H&M Semiconductor
File Size	368.57 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4485 Datasheet

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Other Datasheets by H&M Semiconductor

Part Number	Description
HM4485A	P-Channel Enhancement Mode Power MOSFET
HM4485B	P-Channel Enhancement Mode Power MOSFET
HM4485C	MOSFET
HM4485E	MOSFET
HM4480	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

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Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.