HM4485A mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-40V,ID =-17.5A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <13mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche volta.
General Features
* VDS =-40V,ID =-17.5A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <13mΩ @ VGS=-4.5V
* High density cell .
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