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HM4490 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

General Description

The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Overview

HM4490 N-Channel Enhancement Mode Power MOSFET.

Key Features

  • VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V (Typ:56mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses.