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HM4887 - Dual P-Channel Enhancement Mode Power MOSFET

The HM4887 by H&M Semiconductor is a Dual P-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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Official preview page of the HM4887 Dual P-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number HM4887
Manufacturer H&M Semiconductor
File Size 505.22 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4887-HMSemiconductor.pdf
Additional preview pages of the HM4887 datasheet.

HM4887 Product details

Description

The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

Other Datasheets by H&M Semiconductor
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